Neil Gerrard becomes III-V Epi’s director of epitaxy
Compound semiconductor industry expert to provide MBE and MOCVD know-how.
III-V Epi has appointed Dr Neil Gerrard as director of epitaxy. Neil is a well-respected III-V epitaxial engineer and director, with over thirty years’ industrial experience. Neil’s new role will help capture the molecular-beam epitaxy (MBE) and metalorganic vapour-phase epitaxy (MOCVD), III-V epitaxial manufacturing, support and R&D requirements of III-V Epi’s customers. These range from universities, development departments and start-ups through to defense, smaller datacom and telecom companies.
Neil’s previous III-V, compound semiconductor manufacturing experience has included technology direction; new product development; and wafer FAB and Epitaxy operations. His roles have ranged from technical marketing director at Aixtron UK (Thomas Swan); UK MD at LayTec UK; to engineering lead in start-ups, Kubos and Optical Reference Systems. Neil helped set up and run the wafer fab at Nortel Networks; a multibillion-dollar company. He also helped introduce the MOCVD facility at Sivers.
He first worked with fellow III-V Epi director, Prof Richard Hogg, whilst director of operations and business development for the Engineering and Physical Sciences Research Council (EPSRC). Between them, they helped set up the National Centre for III-V Technologies at the University of Sheffield.
Neil has a PhD from the University of Manchester, Institute of Science and Technology (UMIST). He followed this with post-doctoral research at Bell Labs, where he first began honing his MOCVD skills.
