Crystal IS, an Asahi Kasei company, today announced the successful serial production of 100 mm diameter single-crystal aluminum nitride (AlN) substrates with 99 % usable area, based on current requirements for UVC LEDs, with manufacturing to take place in the United States. The ultra-wide bandgap and high thermal conductivity of AlN help to improve device reliability and performance not only in UVC LEDs but also in next-generation RF and power devices.

“The improvement of our large diameter substrate quality over the last nine months showcases the expertise of our team in crystal growth,” said Eoin Connolly, president and CEO of Crystal IS. “The inherent thermal benefits of aluminum nitride can enable higher performing RF and power devices in mission critical and telecom applications – we are excited to work with our partners to further develop this material to meet their needs.”

Crystal IS manufactures bulk single crystal AlN substrates at its headquarters in Green Island, New York, and began selling 2-inch diameter substrates for research and development in RF and power devices in late 2023. This 100 mm diameter milestone accelerates the development of new applications on AlN substrates as it integrates into existing fabrication lines for RF and power devices using alternative materials. The company plans to offer 100 mm diameter substrates, which will be exclusively manufactured in its US facility, to key partners this year as they continue to expand beyond UVC LEDs.