2D-based photodetector with fast photoresponse
New device uses ternary telluride InSiTe3 with trigonal symmetry and a layered structure
Recently, a collaborated team led by Li Liang and Li Guanghai at the Institute of Solid State Physics (ISSP), Hefei Institutes of Physical Science together with Yan Feng from Hong Kong Polytechnic University (PolyU) developed a new 2D-based photodetector, featuring on ultrafast photoresponse and broadband detection capabilities. The photodetector was made from layered ternary telluride InSiTe3.
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Prototype device for point photodetection based on a 2D-material. (Source: L. Liang)
Photodetectors with broadband detection capabilities play a crucial role in our daily lives and have been extensively used in a wide range of applications. Many 2D materials-based photodetectors exhibit high photoresponsivity and detectivity but slow response speed, which can be attributed to their prolonged excess carrier lifetime. Such slow speed performance has become a bottleneck for 2D materials-based photodetectors in practical applications, especially optical communication. “We found the response of this InSiTe3-based photodetector stable and reversible.” said Li Liang.
In their experiment, the photons responded within 545 to 576 nanoseconds, and the detection capabilities from the ultraviolet (UV) to the near-infrared (NIR) optical communication region ranged from 365 to 1310 nanometers. The promising photodetector is based on ternary telluride InSiTe3 with trigonal symmetry and a layered structure. Scientists synthesized high-quality InSiTe3 crystals and determined its Raman vibration modes by Raman spectra measurements.
They found that the indirect band gap of InSiTe3 can be tuned from 1.30 eV (monolayer) to 0.78 eV (bulk). Moreover, the InSiTe3-based photodetectors exhibit the detectivity of 7.59 × 109 Jones. These outstanding performance values highlight the potential of 2D InSiTe3-based photodetectors in high-speed broadband photodetection. (Source: HFIPS)
